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You are here：Home >> Products >> Chips芯片 >> GaAs ultrafast PIN diode ... >> ADV 118AN5

ADV 118AN5

GaAs rectifier pin-diode chip ADV 118AN5

Category:ADV 118AN5
Click:17
GaAs rectifier pin-diode chip
ADV 118AN5.
? Ultra-fast switching
? High radiation resistance
? High-temperature diode structures
Electrical charasteristics
Design
Parameter
Sym
bol
Unit
Value
Test conditions  Remark
Min.  Typ.  Max.
Forward
voltage
drop
V F
V
-  1,4  1,5
I F =1А at T=+25
?C(normal cond.)
2
-  1,6  1,7  I F =1А at T=-60 ?С
Reverse
leakage
current
I R
uA
-  -  10
V R =700 V at T=+25
?C(normal cond.)
1
-  -  100
V R =700 V at T=+125
?C
2
Breakdown
voltage
V R
V
700  900  -  I R =100µA  1
Reverse
recovery
time
t rr  ns  -  30  35
dI/dt=100А/ms, V R =30
V I F =1А
2
Remark:
1-controlled parameter of chip diode (packageless);
2 - controlled parameter of inbuilt to the package diode
Chip’s size, mm
1,4
±0,03
х 1,4
±0,03
Chip thickness (H), µm
380
±15
Size of anode part, mm
1,4
±0,03
х 1,4
±0,03
Size of cathode part, mm
0,9
-0,01
х 0,9
-0,01
Anode metallization  Au
Cathode metallization  Au
Glassification junction  polyimide
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