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You are here：Home >> Products >> Chips芯片 >> Photoelectric Darlington Ch... >> 60V Series

60V Series

PHOTODARLINGTON CHIP FT059

Category:60V Series
Click:29
PHOTODARLINGTON CHIP
FT059
GENERAL DESCRIPTION
The FT059 chip is fabricated using Silicon Bipolar process
technology. This chip is designed to be used in high CTR
optocouplers.
FEATURES
•  High Sensitivity – Darlington Output
•  High Breakdown Voltage 60 V
•  Chip Size – 1.15 x 1.15 mm
•  Chip Thickness – 0.35 mm±0.02mm
•  Top Contact Metal – Aluminium
•  Bottom Contact metal (collector) - CrNi
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol  Characteristic  Min  Typ  Max  unit
BVceol  Breakdown voltage collector-emitter  60  -  -  V  Ice=1 mA
BVeb  Breakdown voltage emitter-base  6.5  -  -  V  Ieb=50 uA
BVeb  Breakdown voltage emitter-collector  7.0  -  -  V  Iec=50 uA
Ice0  Collector-emitter dark current  -  -  100  nA  Vce=20 V
Vcesat  Collector-emitter saturation voltage  -  -  1.5  V  Ic=1 mA*
h fe  Current transfer ratio  1000  -  -  -  Vce=10V, Ic=1 mA
* IR irradience of chip E = 20 mW/cm 2 . Peak wavelength λ = 850±20 nm.
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