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You are here：Home >> Products >> Chips芯片 >> Phototransistor chip... >> 220V Series

220V Series

PHOTOTRANSISTOR CHIP FT050

Category:220V Series
Click:42
PHOTOTRANSISTOR CHIP
FT050
GENERAL DESCRIPTION
The FT050 chip is fabricated using Silicon Bipolar
process technology. This chip is designed to be
used in optocouplers.
FEATURES
•  Low Saturation 0.2 V
•  High Breakdown Voltage 220 V
•  Chip Size – 1.1 x 1.15 mm
•  Chip Thickness – 0.36 mm ±0.02mm
•  Top Contact Metal – Aluminum
•  Bottom Contact Metal (collector)- CrNi
ABSOLUTE MAXIMUM RATINGS
CHIP TOPOGRAPHY
Operating junction
temperature
-60°C to 85°C
Collector-Emitter voltage  220 V
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol  Characteristic  Min  Typ  Max  unit
BVceol  Breakdown voltage collector-emitter  220  -  -  V  Ice=10 mA
BVeb  Breakdown voltage emitter-collector  7.0  -  -  V  Iec=50 ?A
Ice0  Collector-emitter dark current  -  -  1  мкA Vce=250 V
Vcesat  Collector-emitter saturation voltage  -  0.2  0.4  V  Ic=2 mA, *
h fe  Current transfer ratio  60  -  -  Vce=5 V, Ib=150 ?A
* IR irradience of chip E = 20 mW/cm 2 . Peak wavelength λ = 850±20 nm.
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