PHOTODARLINGTON CHIP FT059
產(chǎn)品類(lèi)別:60V系列
點(diǎn)擊數(shù):81
PHOTODARLINGTON CHIP
FT059
GENERAL DESCRIPTION
The FT059 chip is fabricated using Silicon Bipolar process
technology. This chip is designed to be used in high CTR
optocouplers.
FEATURES
• High Sensitivity – Darlington Output
• High Breakdown Voltage 60 V
• Chip Size – 1.15 x 1.15 mm
• Chip Thickness – 0.35 mm±0.02mm
• Top Contact Metal – Aluminium
• Bottom Contact metal (collector) - CrNi
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Symbol Characteristic Min Typ Max unit
BVceol Breakdown voltage collector-emitter 60 - - V Ice=1 mA
BVeb Breakdown voltage emitter-base 6.5 - - V Ieb=50 uA
BVeb Breakdown voltage emitter-collector 7.0 - - V Iec=50 uA
Ice0 Collector-emitter dark current - - 100 nA Vce=20 V
Vcesat Collector-emitter saturation voltage - - 1.5 V Ic=1 mA*
h fe Current transfer ratio 1000 - - - Vce=10V, Ic=1 mA
* IR irradience of chip E = 20 mW/cm 2 . Peak wavelength λ = 850±20 nm.
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